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ENA1126 MC34051P F9956 EP4SE360 LIMIT NTE5241A 81M35 NBN600
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  2007. 6. 13 1/2 semiconductor technical data SMBB26 schottky barrier type diode revision no : 1 switching type power supply applications. features h low profile surface mount package. h low power loss, high efficiency. h for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application h switching power supply. h dc/dc converter. h home appliances, office equipment. h telecommunication. maximum rating (ta=25 ? ) characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 60 v average output rectitifed current i o 2 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 50 a junction temperature t j -40 q 150 ? storage temperature range t stg -40 q 150 ? electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =2.0a - - 0.65 v repetitive peak reverse current i rrm v rrm =rated, tj=25 ? - - 0.1 ma v rrm =rated, tj=100 ? - - 10 ma total capacitance c t v r =4v, f=1mhz - - 200 pf thermal resistance r th(j-1) junction to lead - - 15 ? /w
2007. 6. 13 2/2 SMBB26 revision no : 1


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